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:: December 1, 2005 |
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:: SST Review
: Metrology
In this edition of SST Review, we focus on the latest developments in metrology. The following collection of articles from Solid State Technology is a comprehensive review of recent research and process considerations for improving device performance through the use of advanced metrology. |
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:: Using AFM to enhance MOCVD-grown OE devices Based on nanoscale surface morphology response, various growth schemes can be applied during process development and commercial UHB-LED growth stages to enhance device characteristics, including optical efficiency and electrical properties. Doru I. Florescu, Veeco Instruments Inc. Solid State Technology Exclusive Online Feature, December 2005 :: Click for Full Story :: :: 45nm opportunity: Hopefuls propose new ways to measure new things Virtually everything may be up for change at the 45nm node, but it looks like the metrology space may be the center of the action. Paula Doe, Contributing Editor Solid State Technology, September 2005 :: Click for Full Story :: :: Detecting profile excursions using spectroscopic ellipsometry This work evaluates the capability of a spectroscopic ellipsometry-based profile technology as a new metrology tool to monitor polysilicon gate processes at 130nm and 90nm nodes. Mike Yeh, Shu-Ping Fang, Bo-Jau Tsau, C.C. Huang, Benjamin Lin, United Microelectronic Corp.; Steven Fu, Jay Chen, Regina Freed, Ted Dziura, Mike Slessor, KLA-Tencor Corp. Solid State Technology Exclusive Online Feature, July 2005 :: Click for Full Story :: :: Introduction of stress requires stress metrology methods With the increasing demands on IC manufacturers to get more mileage out of each technology node, the use of stress as a node extender will continue for the foreseeable future. Processes used to increase carrier mobility are discussed along with metrology methods and challenges. Alain Diebold, SEMATECH Solid State Technology, July 2005 :: Click for Full Story :: :: Development to manufacturing using integrated scatterometry Several integrated scatterometry applications are being developed and implemented, while many applications still remain to be explored. Matt Sendelbach, IBM Microelectronics; Dan Prager, Timbre Technologies Inc. Solid State Technology, July 2005 :: Click for Full Story :: :: Controlling CMP by optically monitoring wafer stresses The application of a new coherent gradient sensing interferometer that characterizes single- and double-layer copper damascene processing of 200 and 300mm wafers - using low-k dielectric films - is demonstrated. Ronald Carpio, ATDF; Dave Owen, Jennifer Woodring, Oraxion Diagnostics Solid State Technology, May 2005 :: Click for Full Story :: :: Mask metrology using OCD for profiling Optical critical-dimension (OCD) metrology or "scatterometry" has experienced rapid growth in sub-0.1-micron wafer processes for both CD measurements and line profiling. Ray Hoobler, Peter Gise, Nanometrics Solid State Technology, April 2005 :: Click for Full Story :: :: Metrology: A case of multiples Industry experts comment on the proliferation of metrology tools and what, if anything, can be done to mitigate the drawbacks. Alain C. Diebold, SEMATECH; Paul Terbeek, Therma-Wave Inc. Solid State Technology, March 2005 :: Click for Full Story ::
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